Dopant gases header
SIAD dopant gases are a source of controllable impurities used to modify the local electrical properties of the semiconductor material.
Specifically, a dopant contributes either an electron deficiency (p dopant) or an electron (n dopant) to the local structure of the molecule's crystal lattice, which in turn alters the conductivity of the material. Dopants are available in liquid, solid and gaseous states. Common gaseous n dopants are arsine and phosphine. A common gaseous p dopant is diborane. Dopants are used in epitaxial deposition, diffusion and ion implantation.
A major growth area for arsine and phosphine use is the fabrication of wafers called "III-V devices," using a vapour phase epitaxy (VPE) or, more frequently, the metal organic chemical vapour deposition (MOCVD) method.
SIAD provides a full line of dopant gases.